MMBT589 [BL Galaxy Electrical]

PNP General Purpose Transistor; PNP通用晶体管
MMBT589
型号: MMBT589
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

PNP General Purpose Transistor
PNP通用晶体管

晶体 晶体管
文件: 总4页 (文件大小:199K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBT589  
FEATURES  
Pb  
z
Epitaxial planar die construction.  
Lead-free  
z
Also available in lead free version.  
APPLICATIONS  
z
High current surface mount PNP silicon switching transistor  
for load management in portable appilications.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
589  
Package Code  
MMBT589  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
UNIT  
V
collector-base voltage  
-50  
-30  
collector-emitter voltage  
emitter-base voltage  
V
-5  
V
collector current (DC)  
-1.0  
A
PC  
Collector dissipation  
0.31  
403  
W
RθJA  
Thermal Resistance, Junction to Ambient  
junction and storage temperature  
°C/W  
°C  
Tj ,Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Document number: BL/SSSTC118  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBT589  
Symbol  
Parameter  
Test conditions  
MIN. MAX. UNIT  
V(BR)CBO  
Collector-base breakdown voltage  
IC=-100μA,IE=0  
-50  
-30  
-5  
V
V
V
V(BR)CEO  
V(BR)EBO  
ICBO  
IEBO  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
IC=-10mA,IB=0  
IE=-100μA,IC=0  
collector cut-off current  
emitter cut-off current  
IE = 0; VCB = -30V  
IC = 0; VEB = -4V  
-
-
-0.1  
-0.1  
μA  
μA  
V
V
V
V
CE = -2V; IC= -1mA  
CE = -2V;IC = -500mA  
CE = -2V;IC = -1.0A  
CE = -2V;IC = -2.0A  
100  
100  
80  
40  
-
-
300  
-
hFE  
DC current gain  
-
IC = -0.5A; IB = -0.05A  
IC = -1.0A; IB = -0.1A  
IC = -2.0A; IB = -0.2A  
-0.25  
-0.30  
-0.65  
VCE(sat)  
collector-emitter saturation voltage  
-
V
-
VBE(sat)  
fT  
base-emitter saturation voltage  
transition frequency  
IC = -1.0A; IB = -0.1A  
-
100  
-
-1.2  
-
V
IC = -100mA; VCE = -5V;  
f = 100MHz  
MHz  
pF  
Cobo  
Output capacitance  
f=1.0MHz  
15  
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified  
Document number: BL/SSSTC118  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBT589  
Document number: BL/SSSTC118  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
PNP General Purpose Transistor  
MMBT589  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
SOT-23  
A
Dim  
A
Min  
2.85  
1.25  
Max  
2.95  
1.35  
E
B
K
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
J
D
G
H
J
G
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
MMBT589  
3000/Tape&Reel  
Document number: BL/SSSTC118  
Rev.A  
www.galaxycn.com  
4

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